Composition and methods for forming metal films on semiconductor substrates using supercritical solvents

ABSTRACT

Compositions and methods for forming metal films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing at least one metal precursor comprising at least one ligand, an excess amount of neutral labile ligands, a supercritical solvent, and optionally at least one source of B, C, N, Si, P, and mixtures thereof; exposing the composition to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; disassociating the at least one ligand from the metal precursor; and forming the metal film while minimizing formation of metal oxides.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. application Ser.No. 12/010,542 entitled COMPOSITION AND METHODS FOR FORMING METAL FILMSON SEMICONDUCTOR SUBSTRATES USING SUPERCRITICAL SOLVENTS, filed on Jan.25, 2008 which claims priority under 35 U.S.C. §119 to U.S. ProvisionalApplication No. 60/898,122 entitled COMPOSITION AND METHODS FOR FORMINGMETAL FILMS ON SEMICONDUCTOR SUBSTRATES USING SUPERCRITICAL SOLVENTS,filed Jan. 30, 2007, the entire content of each is hereby incorporatedby reference.

BACKGROUND

In the field of semiconductor manufacturing, deposition of materialssuch as metal films on semiconductor substrates can be carried out by avariety of techniques, including chemical vapor deposition (“CVD”),physical vapor deposition (“PVD”), and atomic layer deposition (“ALD”).

Conventional CVD processes for metal film deposition occurs through thevolatilization of metal precursors at high temperatures under vacuum.The selection of metal precursors available for CVD is limited byrequirements such as high thermal stability and sufficient volatility ofthe metal precursors. When a precursor is selected and volatilizedduring the CVD process, the metal precursor is usually only present inthe vapor at low concentrations. This can lead to limited film growthresulting in non-conformal films. Moreover, the high temperaturerequirements of CVD can significantly impact the thermal budget duringwafer processing.

With regard to conventional PVD of metal precursors, PVD isfundamentally limited by the nature of a line-of-sight depositionprocess that results in non-conformal film growth and inability todeposit material in certain types of high aspect ratio structures.Additional shortcomings of PVD include the significant particle levelsthat are generated in the PVD process, limited control and lack ofhomogeneity of the deposited film, and process control issues relatingto diffusion of the sputtered material.

Conventional ALD processes for deposition of thin films occurs throughexposure of the substrate to alternating cycles of precursors to growatomically thin films. While the ability to grow films in a carefullycontrolled manner at the atomic level results in conformal deposition,the high number of cycles required to prepare even very thin films leadsto slow film growth. Moreover, repetitive valve cycling can also lead toparticle generation and maintenance issues.

Currently, several integrated circuit (“IC”) processes require low costdeposition of conformal thin-films for both front end of line and backend of line applications, including capacitor electrodes, barriers, andinterconnects.

Some of the limitations of conventional CVD, PVD, and ALD techniquesdescribed above suggest a need in the art for improved methods ofdepositing metal(s) on semiconductor substrates.

SUMMARY

According to a first embodiment, a method for forming a metal film on asemiconductor substrate comprises heating the semiconductor substrate toobtain a heated semiconductor substrate; exposing the heatedsemiconductor substrate to a composition containing at least one metalprecursor comprising at least one ligand, an excess amount of neutrallabile ligands, a supercritical solvent, and optionally at least onesource of B, C, N, Si, P, and mixtures thereof; exposing the compositionto a reducing agent and/or thermal energy at or near the heatedsemiconductor substrate; disassociating the at least one ligand from themetal precursor; and forming the metal film while minimizing formationof metal oxides.

The metal film in the first embodiment can comprise one or more metals.In other embodiments, one or more layers of the metal film can bedeposited.

The composition of the first embodiment can further comprise (i) atleast one reducing agent, and/or (ii) at least one co-solvent.

The reducing agent can be selected from the group consisting of zinc,magnesium, cadmium, mercury, sodium, potassium, lithium, boron,aluminum, and alloys thereof. In other embodiments, the reducing agentcan be selected from the group consisting of hydrogen, alcohols,formaldehyde, silanes, thiols, amines, phosphines, alkenes, dienes,ketones, diketones, heterocyclics, and mixtures thereof. In yet otherembodiments, the reducing agent can be selected from the groupconsisting of lithium aluminum hydride, sodium borohydride, potassiumferricyanide, sodium naphthalenide, lithium amines, calcium hydride,Fe(II) complexes, cobaltocene, organoboranes, and mixtures thereof. Inpreferred embodiments, the reducing agent can be hydrogen.

The co-solvent can be selected from the group consisting of alcohols,ketones, amines, esters, ethers, lactones, carbonates, alkanes, arenes,heterocyclics, amides, and mixtures thereof. In other embodiments, theco-solvent can be selected from the group consisting of methanol,ethanol, N-alkylpyrrolidones, N-arylpyrrolidones, dimethylsulfoxide,sulfolane, catechol, ethyl lactate, acetone, butyl carbitol,monoethanolamine, butyrol lactone, diglycol amine, gamma-butyrolactone,butylene carbonate, ethylene carbonate, propylene carbonate,hydrofluorocarbons, hydrofluoroethers, sulfur hexafluoride, propane,butane, pentane, hexane, methane, propane, dimethylformamide,N-methylpyrrolidone, diethyl ether, acetone, isopropyl alcohol,dimethylsulfoxide, and mixtures thereof.

The source of B, C, N, Si, or P can be selected from the groupconsisting of boranes, diborane, alkyls, arenes, alkenes, alkyllithium,Grignard agents, dimethyl magnesium, methyl zinc, organocuprates,peroxides, amines, imines, nitriles, cyanates, azides, azo compounds,silanes, siloxanes, phosphines, and phosphites. In other embodiments,the source of B, C, N, Si or P can be selected from the group consistingof diborane, triphenyl phosphine, triethyl phosphine, ammonia, triethylamine, triphenyl amine, diazomethane, hydrazine, diphenyl hydrazine,acetonitrile, butyronitrile, silane, disilane, methane, ethane,methylithium, and methyl Grignard.

The metal precursor of the first embodiment can be present in a range offrom about 0.001 to about 20% by weight. The supercritical solvent canbe present in a range of from about 10% to about 99.9% by weight. Thecomposition of the first embodiment can be surfactant-free.

The metal precursor of the first embodiment can comprise transitionmetals selected from the group consisting of scandium, yttrium,lanthanum, actinium, titanium, zirconium, hafnium, rutherfordium,vanadium, niobium, tantalum, dubnium, chromium, molybdenum, tungsten,seaborgium, manganese, technitium, rhenium, bohrium, iron, ruthenium,osmium, hassium, cobalt, rhodium, iridium, meitnerium, nickel,palladium, platinum, darmstadtium, copper, silver, gold, zinc, cadmium,mercury, and mixtures thereof. More preferably, the metal precursor cancomprise transition metals selected from the group consisting oftitanium, zirconium, hafnium, vanadium, tantalum, chromium, molybdenum,tungsten, manganese, iron, cobalt, nickel, palladium, platinum, copper,silver, gold, zinc, cadmium, mercury, and mixtures thereof. Mostpreferably, the metal precursor can comprise transition metals selectedfrom the group consisting of tantalum, hafnium, zirconium, titanium,tungsten, molybdenum, chromium, and mixtures thereof.

The neutral labile ligands according to the first embodiment can bepresent in a ratio of at least about 10:1 of moles of neutral labileligands to moles of the metal precursor. More preferably, the neutrallabile ligands can be present in a ratio of at least about 100:1 ofmoles of neutral labile ligands to moles of the metal precursor. Mostpreferably, the neutral labile ligands can be present in a ratio of atleast about 1000:1 of moles of neutral labile ligands to moles of themetal precursor.

The neutral labile ligands according to the first embodiment can beselected from the group consisting of ethers, nitriles, thioethers,alkenes, alkynes, acyclic dienes, arenes, aromatics, ketones, amines,phosphines, isocyanides, isonitriles, CO, dinitrogen, and mixturesthereof. In other embodiments, the neutral labile ligands can beselected from the group consisting of CO, acetonitrile, tetrahydrofuran,ethyl ether, triethylamine, triphenyl phosphine, ethylene, butadiene,4-heptanone, and mixtures thereof. In preferred embodiments, the neutrallabile ligands can be selected from the group consisting of CO,acetonitrile, tetrahydrofuran, ether, and mixtures thereof.

The supercritical solvent according to the first embodiment can beselected from the group consisting of carbon dioxide, oxygen, argon,krypton, xenon, ammonia, methane, methanol, dimethyl ketone, a hydrogenforming gas, sulfur hexafluoride, and mixtures thereof.

The supercritical solvent can be at a temperature of from about 20° C.to about 150° C.

The temperature of the semiconductor substrate can be from about 20° C.to about 450° C.

The method according to the first embodiment can be carried out in avessel which is pressurized from about 1000 psi to about 7000 psi.

According to a second embodiment, a method for forming a metal film on asemiconductor substrate comprises heating the semiconductor substrate toobtain a heated semiconductor substrate; exposing the heatedsemiconductor substrate to a composition containing at least one metalprecursor comprising at least one ligand, an excess amount of neutrallabile ligands, a supercritical solvent, and at least one source of B,C, N, Si, P, and mixtures thereof; exposing the composition to areducing agent and/or thermal energy at or near the heated semiconductorsubstrate; displacing the at least one ligand from the metal precursorwith the at least once source of B, C, N, Si, P, and mixtures thereof;and forming the metal film while minimizing formation of metal oxides.

In some embodiments, after the displacing step in the second embodiment,the metal precursor with the at least one source of B, C, N, Si, P, andmixtures thereof is modified to obtain a metal defined by M_(a)X_(b),and wherein M is a metal, X is B, C, N, Si, P, or mixtures thereof, anda or b=1 to 5.

The modification can comprise exposing the metal precursor to thermalenergy, reducing the metal, reducing the at least one source of B, C, N,Si, P, and mixtures thereof, and/or exposing the metal precursor to areagent.

The metal film in the second embodiment can comprise one or more metals.In other embodiments, one or more layers of the metal film can bedeposited.

The composition of the second embodiment can further comprise (i) atleast one reducing agent, and/or (ii) at least one co-solvent.

The reducing agent can be selected from the group consisting of zinc,magnesium, cadmium, mercury, sodium, potassium, lithium, boron,aluminum, and alloys thereof. In other embodiments, the reducing agentcan be selected from the group consisting of hydrogen, alcohols,formaldehyde, silanes, thiols, amines, phosphines, alkenes, dienes,ketones, diketones, heterocyclics, and mixtures thereof. In yet otherembodiments, the reducing agent can be selected from the groupconsisting of lithium aluminum hydride, sodium borohydride, potassiumferricyanide, sodium naphthalenide, lithium amines, calcium hydride,Fe(II) complexes, cobaltocene, organoboranes, and mixtures thereof. Inpreferred embodiments, the reducing agent can be hydrogen.

The co-solvent can be selected from the group consisting of alcohols,ketones, amines, esters, ethers, lactones, carbonates, alkanes, arenes,heterocyclics, amides, and mixtures thereof. In other embodiments, theco-solvent can be selected from the group consisting of methanol,ethanol, N-alkylpyrrolidones, N-arylpyrrolidones, dimethylsulfoxide,sulfolane, catechol, ethyl lactate, acetone, butyl carbitol,monoethanolamine, butyrol lactone, diglycol amine, gamma-butyrolactone,butylene carbonate, ethylene carbonate, propylene carbonate,hydrofluorocarbons, hydrofluoroethers, sulfur hexafluoride, propane,butane, pentane, hexane, methane, propane, dimethylformamide,N-methylpyrrolidone, diethyl ether, acetone, isopropyl alcohol,dimethylsulfoxide, and mixtures thereof.

The source of B, C, N, Si, or P can be selected from the groupconsisting of boranes, diborane, alkyls, arenes, alkenes, alkyllithium,Grignard agents, dimethyl magnesium, methyl zinc, organocuprates,peroxides, amines, imines, nitriles, cyanates, azides, azo compounds,silanes, siloxanes, phosphines, and phosphites. In other embodiments,the source of B, C, N, Si or P can be selected from the group consistingof diborane, triphenyl phosphine, triethyl phosphine, ammonia, triethylamine, triphenyl amine, diazomethane, hydrazine, diphenyl hydrazine,acetonitrile, butyronitrile, silane, disilane, methane, ethane,methylithium, and methyl Grignard.

The metal precursor of the second embodiment can be present in a rangeof from about 0.001 to about 20% by weight. The supercritical solventcan be present in a range of from about 10% to about 99.9% by weight.The composition of the second embodiment can be surfactant-free.

The metal precursor of the second embodiment can comprise transitionmetals selected from the group consisting of scandium, yttrium,lanthanum, actinium, titanium, zirconium, hafnium, rutherfordium,vanadium, niobium, tantalum, dubnium, chromium, molybdenum, tungsten,seaborgium, manganese, technitium, rhenium, bohrium, iron, ruthenium,osmium, hassium, cobalt, rhodium, iridium, meitnerium, nickel,palladium, platinum, darmstadtium, copper, silver, gold, zinc, cadmium,mercury, and mixtures thereof. More preferably, the metal precursor cancomprise transition metals selected from the group consisting oftitanium, zirconium, hafnium, vanadium, tantalum, chromium, molybdenum,tungsten, manganese, iron, cobalt, nickel, palladium, platinum, copper,silver, gold, zinc, cadmium, mercury, and mixtures thereof. Mostpreferably, the metal precursor can comprise transition metals selectedfrom the group consisting of tantalum, hafnium, zirconium, titanium,tungsten, molybdenum, chromium, and mixtures thereof.

The neutral labile ligands according to the second embodiment can bepresent in a ratio of at least about 10:1 of moles of neutral labileligands to moles of the metal precursor. More preferably, the neutrallabile ligands can be present in a ratio of at least about 100:1 ofmoles of neutral labile ligands to moles of the metal precursor. Mostpreferably, the neutral labile ligands can be present in a ratio of atleast about 1000:1 of moles of neutral labile ligands to moles of themetal precursor.

The neutral labile ligands according to the second embodiment can beselected from the group consisting of ethers, nitriles, thioethers,alkenes, alkynes, acyclic dienes, arenes, aromatics, ketones, amines,phosphines, isocyanides, isonitriles, CO, dinitrogen, and mixturesthereof. In other embodiments, the neutral labile ligands can beselected from the group consisting of CO, acetonitrile, tetrahydrofuran,ethyl ether, triethylamine, triphenyl phosphine, ethylene, butadiene,4-heptanone, and mixtures thereof. In preferred embodiments, the neutrallabile ligands can be selected from the group consisting of CO,acetonitrile, tetrahydrofuran, ether, and mixtures thereof.

The supercritical solvent according to the second embodiment can beselected from the group consisting of carbon dioxide, oxygen, argon,krypton, xenon, ammonia, methane, methanol, dimethyl ketone, a hydrogenforming gas, sulfur hexafluoride, and mixtures thereof.

The supercritical solvent can be at a temperature of from about 20° C.to about 150° C.

The temperature of the semiconductor substrate can be from about 20° C.to about 450° C.

The method according to the second embodiment can be carried out in avessel which is pressurized from about 1000 psi to about 7000 psi.

According to a third embodiment, a composition for forming metal filmson semiconductor substrates is disclosed. The composition comprises atleast one metal precursor comprising at least one source of B, C, N, Si,P, and mixtures thereof; neutral labile ligands; at least onesupercritical solvent; and optionally at least one source of B, C, N,Si, P, and mixtures thereof.

The composition of the third embodiment can further comprise (i) atleast one reducing agent, and/or (ii) at least one co-solvent.

The reducing agent can be selected from the group consisting of zinc,magnesium, cadmium, mercury, sodium, potassium, lithium, boron,aluminum, and alloys thereof. In other embodiments, the reducing agentcan be selected from the group consisting of hydrogen, alcohols,formaldehyde, silanes, thiols, amines, phosphines, alkenes, dienes,ketones, diketones, heterocyclics, and mixtures thereof. In yet otherembodiments, the reducing agent can be selected from the groupconsisting of lithium aluminum hydride, sodium borohydride, potassiumferricyanide, sodium naphthalenide, lithium amines, calcium hydride,Fe(II) complexes, cobaltocene, organoboranes, and mixtures thereof. Inpreferred embodiments, the reducing agent can be hydrogen.

The co-solvent can be selected from the group consisting of alcohols,ketones, amines, esters, ethers, lactones, carbonates, alkanes, arenes,heterocyclics, amides, and mixtures thereof. In other embodiments, theco-solvent can be selected from the group consisting of methanol,ethanol, N-alkylpyrrolidones, N-arylpyrrolidones, dimethylsulfoxide,sulfolane, catechol, ethyl lactate, acetone, butyl carbitol,monoethanolamine, butyrol lactone, diglycol amine, gamma-butyrolactone,butylene carbonate, ethylene carbonate, propylene carbonate,hydrofluorocarbons, hydrofluoroethers, sulfur hexafluoride, propane,butane, pentane, hexane, methane, propane, dimethylformamide,N-methylpyrrolidone, diethyl ether, acetone, isopropyl alcohol,dimethylsulfoxide, and mixtures thereof.

The source of B, C, N, Si, or P can be selected from the groupconsisting of boranes, diborane, alkyls, arenes, alkenes, alkyllithium,Grignard agents, dimethyl magnesium, methyl zinc, organocuprates,peroxides, amines, imines, nitriles, cyanates, azides, azo compounds,silanes, siloxanes, phosphines, phosphites, and mixtures thereof. Inother embodiments, the source of B, C, N, Si or P can be selected fromthe group consisting of diborane, triphenyl phosphine, triethylphosphine, ammonia, triethyl amine, triphenyl amine, diazomethane,hydrazine, diphenyl hydrazine, acetonitrile, butyronitrile, silane,disilane, methane, ethane, methylithium, methyl Grignard, and mixturesthereof.

The metal precursor of the third embodiment can be present in thecomposition in a range of from about 0.001 to about 20% by weight. Thesupercritical solvent can be present in the composition in a range offrom about 10% to about 99.9% by weight. The composition of the thirdembodiment can be surfactant-free.

The metal precursor of the third embodiment can comprise transitionmetals selected from the group consisting of scandium, yttrium,lanthanum, actinium, titanium, zirconium, hafnium, rutherfordium,vanadium, niobium, tantalum, dubnium, chromium, molybdenum, tungsten,seaborgium, manganese, technitium, rhenium, bohrium, iron, ruthenium,osmium, hassium, cobalt, rhodium, iridium, meitnerium, nickel,palladium, platinum, darmstadtium, copper, silver, gold, zinc, cadmium,mercury, and mixtures thereof. More preferably, the metal precursor cancomprise transition metals selected from the group consisting oftitanium, zirconium, hafnium, vanadium, tantalum, chromium, molybdenum,tungsten, manganese, iron, cobalt, nickel, palladium, platinum, copper,silver, gold, zinc, cadmium, mercury, and mixtures thereof. Mostpreferably, the metal precursor can comprise transition metals selectedfrom the group consisting of tantalum, hafnium, zirconium, titanium,tungsten, molybdenum, chromium, and mixtures thereof.

The neutral labile ligands according to the third embodiment can bepresent in a ratio of at least about 10:1 of moles of neutral labileligands to moles of the metal precursor. More preferably, the neutrallabile ligands can be present in a ratio of at least about 100:1 ofmoles of neutral labile ligands to moles of the metal precursor. Mostpreferably, the neutral labile ligands can be present in a ratio of atleast about 1000:1 of moles of neutral labile ligands to moles of themetal precursor.

The neutral labile ligands according to the third embodiment can beselected from the group consisting of ethers, nitriles, thioethers,alkenes, alkynes, acyclic dienes, arenes, aromatics, ketones, amines,phosphines, isocyanides, isonitriles, CO, dinitrogen, and mixturesthereof. In other embodiments, the neutral labile ligands can beselected from the group consisting of CO, acetonitrile, tetrahydrofuran,ethyl ether, triethylamine, triphenyl phosphine, ethylene, butadiene,4-heptanone, and mixtures thereof. In preferred embodiments, the neutrallabile ligands can be selected from the group consisting of CO,acetonitrile, tetrahydrofuran, ether, and mixtures thereof.

The supercritical solvent according to the third embodiment can beselected from the group consisting of carbon dioxide, oxygen, argon,krypton, xenon, ammonia, methane, methanol, dimethyl ketone, a hydrogenforming gas, sulfur hexafluoride, and mixtures thereof.

The metal film in the third embodiment can comprise one or more metals.In other embodiments, one or more layers of the metal film can bedeposited.

DETAILED DESCRIPTION

Various embodiments disclosed herein are directed to depositing amaterial on a substrate surface such as a semiconductor substrate. Themethods and compositions disclosed herein include the use of chemicalfluid deposition (“CFD”) using supercritical solvents.

The term “metal film” as used herein, refers to a film containing one ormore metals and optionally one or more of the main group elements, suchas, B, C, N, Si and/or P, in which the main group elements may or maynot be covalently bonded to the metal. Examples include, but are notlimited to, an elemental Ta(0) film, an alloy film of elemental Ta(0)and Ru(0), a Ru(0) film doped with phosphorous, and a Ta(III) N film.

The term “formal oxidation state”, as used herein, refers to thehypothetical charge on a metal in a metal precursor based on generallyaccepted electron counting theory.

“Neutral labile ligands”, as used herein, include (1) chemical moietiesor molecules that can easily associate and disassociate from a metal andhave a neutral charge so that there is no increase in the formaloxidation state of the metal upon association with the metal, and (2)sources of the chemical moieties or molecules described in (1).

According to an embodiment, a composition for forming metal films onsemiconductor substrates comprises at least one metal precursorcomprising at least one source of B, C, N, Si, P, and mixtures thereof;neutral labile ligands; at least one supercritical solvent; andoptionally at least one source of B, C, N, Si, P, and mixtures thereof.

The compositions can further comprise a reducing agent, and/or aco-solvent. The compositions can be surfactant-free.

The metal precursor can be present in a range of from about 0.001 toabout 20% by weight, the neutral labile ligands are present in a rangeof from about 0.001% to about 90% by weight, and the supercriticalsolvent is present in a range of from about 10% to about 99.9% byweight.

The metal precursor can comprise metals selected from the groupconsisting of scandium, yttrium, lanthanum, actinium, titanium,zirconium, hafnium, rutherfordium, vanadium, niobium, tantalum, dubnium,chromium, molybdenum, tungsten, seaborgium, manganese, technitium,rhenium, bohrium, iron, ruthenium, osmium, hassium, cobalt, rhodium,iridium, meitnerium, nickel, palladium, platinum, darmstadtium, copper,silver, gold, zinc, cadmium, and mercury. The metal precursor can morepreferably comprise metals selected from the group consisting oftitanium, zirconium, vanadium, tantalum, hafnium, chromium, molybdenum,tungsten, manganese, iron, cobalt, nickel, palladium, platinum, copper,silver, gold, zinc, cadmium, and mercury. The metal precursor can mostpreferably comprise metals selected from the group consisting oftantalum, hafnium, zirconium, titanium, tungsten, molybdenum, andchromium.

According to preferred embodiments, neutral labile ligands can beselected from the group consisting of ethers, nitriles, thioethers,alkenes, alkynes, acyclic dienes, aromatics, ketones, amines,phosphines, isocyanides, isonitriles, CO, dinitrogen, and mixturesthereof.

According to more preferred embodiments, the neutral labile ligands canbe selected from the group consisting of CO, acetonitrile,tetrahydrofuran, ethyl ether, triethylamine, triphenyl phosphine,ethylene, butadiene, 4-heptanone, and mixtures thereof.

Additional examples of neutral labile ligands are disclosed in“Principles and Applications of Organotransition Metal Chemistry”, J. P.Collman, L. S. Hegedus, J. R. Norton, R. G. Finke; University ScienceBooks; 1987, pp 24-29.

The supercritical solvent can be selected from the group consisting ofcarbon dioxide, oxygen, argon, krypton, xenon, ammonia, methane,methanol, dimethyl ketone, a hydrogen forming gas, sulfur hexafluoride,and mixtures thereof.

The reducing agent can be selected from the group consisting of zinc,magnesium, cadmium, mercury, sodium, potassium, lithium, boron,aluminum, and alloys thereof. In other embodiments, the reducing agentcan be selected from the group consisting of hydrogen, alcohols,formaldehyde, silanes, thiols, amines, phosphines, alkenes, dienes,ketones, diketones, heterocyclics, and mixtures thereof. In yet otherembodiments, the reducing agent can be selected from the groupconsisting of lithium aluminum hydride, sodium borohydride, potassiumferricyanide, sodium naphthalenide, lithium amines, calcium hydride,Fe(II) complexes, cobaltocene, organoboranes, and mixtures thereof. Inpreferred embodiments, the reducing agent can be hydrogen.

Co-solvents can be useful in the deposition composition and can be ofany suitable type. Illustrative species include, but are not limited to,methanol, ethanol, and higher alcohols, N-alkylpyrrolidones orN-arylpyrrolidones, such as N-methyl-, N-octyl-, orN-phenyl-pyrrolidones, dimethylsulfoxide, sulfolane, catechol, ethyllactate, acetone, butyl carbitol, monoethanolamine, butyrol lactone,diglycol amine, gamma-butyrolactone, butylene carbonate, ethylenecarbonate, and propylene carbonate.

Additional examples of the co-solvent include hydrofluorocarbons,hydrofluoroethers, sulfur hexafluoride, propane, butane, pentane,hexane, methane, dimethylformamide, N-methylpyrrolidone, diethyl ether,acetone, isopropyl alcohol, and/or dimethylsulfoxide.

The source of B, C, N, Si, or P can be selected from the groupconsisting of boranes, diborane, alkyls, arenes, alkenes, alkyllithium,Grignard agents, dimethyl magnesium, methyl zinc, organocuprates,peroxides, amines, imines, nitriles, cyanates, azides, azo compounds,silanes, siloxanes, phosphines, and phosphites. In other embodiments,the source of B, C, N, Si or P can be selected from the group consistingof diborane, triphenyl phosphine, triethyl phosphine, ammonia, triethylamine, triphenyl amine, diazomethane, hydrazine, diphenyl hydrazine,acetonitrile, butyronitrile, silane, disilane, methane, ethane,methylithium, and methyl Grignard.

A preferred deposition composition is surfactant-free. Optionally,surfactants can be added to the deposition compositions. The surfactantscan be selected from the group consisting of anionic, neutral, cationic,and zwitterionic surfactants. Preferably the surfactants can be selectedfrom the group consisting of acetylenic alcohols and diols, long alkylchain secondary and tertiary amines, and their respective fluorinatedanalogs.

Additional examples of surfactants can include quaternary ammonium saltsand phosphate esters, triblock copolymers of polyethylene,polypropylene, polyalkyloxide materials, triblock neutral surfactants,and/or polyoxyethylene alkyl ethers.

Although carbon dioxide is the preferred supercritical solvent in theembodiments described above, any other suitable supercritical solventcan be used to perform the same functions as carbon dioxide. Othersupercritical solvents that can be used in the embodiments describedabove include any solvent that is in supercritical form and canpenetrate the openings such as vias, trenches, etc., of semiconductorsubstrates. Preferably, the supercritical solvent is substantiallynon-polar and has a substantially negligible surface tension.

Additional details regarding suitable supercritical solvents aredisclosed in, for example, commonly assigned U.S. Pre-Grant PublicationNumber 2004/0187792, which is herein incorporated by reference inentirety.

According to further embodiments, methods for the deposition of metalfilms using the compositions described in the above embodiments aredisclosed.

In the metal deposition process described herein, the formal oxidationstate of the metal in the metal film is the same as or lower than theoxidation state of the metal in the metal precursor. In both cases, apreliminary step in the formation of the metal film is dissociation ofat least some of the ligands on the metal precursor. Dissociation ofligands will open up coordination sites on the metal precursor that maybecome filled with anionic Lewis base ligands such as oxygen, halides,etc. that are adventitiously present in the deposition chamber and willincrease the oxidation state of the metal. In the presence of excess,neutral, labile ligands, open coordination sites on the metal precursorbecome kinetically favored to bind with these ligands rather thanadventitious oxidizing sources. The neutral, labile ligands act astemporary placeholders to fill the coordination sites on the precursoruntil they are dissociated or displaced by the ligand of choice. In thismanner, the addition of excess neutral labile ligands helps to preventoxidation and facilitate the deposition of metal films.

Early transition metal precursors such as Ta tend to be electropositive,oxophilic, and form unstable low valent complexes, wherein the metal inthe metal precursor has a thermodynamically disfavored oxidation state.Any empty coordination sites that become available on the metal in themetal precursor during the deposition in supercritical fluids processingwill tend to be rapidly filled by anionic Lewis base ligands (i.e.,oxide, halide, etc.). Binding of the metal with these anionic Lewis baseligands leads to an increase in the formal oxidation state of the metalmaking it substantially difficult to prepare and obtain metal films.

There is a strong thermodynamic driving force to fill empty coordinationsites on early transition metal precursors, and so even very low levelsof oxidizing sources during the deposition process tend to result information of unwanted oxidized metal species. While it is theoreticallypossible to remove all traces of oxidizing sources from a supercriticalfluid deposition process, from a practical standpoint it is difficult tosuccessfully remove all traces of oxidizing sources. Moreover, even ifit was possible to remove all traces of oxidizing sources, such removalsteps can render the deposition process ineffective based on efficiencyand costs.

According to various embodiments described herein is the use of neutrallabile ligands that can temporarily fill empty coordination sites onmetals during deposition processes. The temporary filling of these emptycoordination sites can substantially eliminate oxidation of the metalthereby facilitating the generation of metal films.

The neutral labile ligands fill the empty coordination sites temporarilybecause the bond formed between the neutral labile ligand and the metalis in general substantially weaker in comparison to the bond formedbetween a metal and a Lewis base ligand with a negative formal charge.As a result of the weak bond formed between the neutral labile ligandand the metal, the neutral labile ligand easily disassociates from themetal. The molar excess of neutral labile ligands promotes the rapidfilling of the empty coordination sites on the metal in the metalprecursor. The rapid filling of the empty coordination sites therebypromotes the maintenance of the low oxidation state of the metal whichin turn promotes further growth of the metal film.

Several types of metal films can be produced by the methods disclosedherein, including a pure elemental M(0) metal film, a film containing anintimate blend of one or more elemental M(0) metals, stratified films ofone or more elemental M(0) metals, or films containing both metals andat least one of the main group elements B, C, N, Si or P.

For a film containing both a metal and a main group element, the metalmay be directly bound to the main group element, as in Ta(III) N; or itmay be a metal film doped with a main group element, such as Co(0) dopedwith P. In both cases, the source of the main group element may bederived from the metal precursor, or from the addition of chemistry thatcontains the desired main group element. Ligands on the metal precursorthat may be useful for the incorporation of main group elements into ametal film include boranes, borates, alkyls, arenes, alkenes, alkynes,carbenes, carbines, amines, imines, nitriles, isocyanides, nitrosyls,imides, amides, silanes, siloxanes, phosphines, phosphites, andphosphides. Sources of additional chemistry that can be added to thecomposition to provide the desired main group element includes, boranes,diborane, alkyls, arenes, alkenes, alkyllithium, Grignard agents,dimethyl magnesium, methyl zinc, organocuprates, peroxides, amines,imines, nitriles, cyanates, azides, azo compounds, silanes, siloxanes,phosphines, and phosphites. For example, a Ta precursor containing aterminal imide bond would be an appropriate precursor to prepareTa(III)N. In another example, a deposition composition containingcobaltocene and triphenyl phosphine could be used to prepare a Co(0)film doped with P.

For the deposition of metal films in supercritical fluids, metalprecursors with metals having any oxidation state can be used. The metalprecursor can comprise metals selected from the group consisting ofscandium, yttrium, lanthanum, actinium, titanium, zirconium, hafnium,rutherfordium, vanadium, niobium, tantalum, dubnium, chromium,molybdenum, tungsten, seaborgium, manganese, technitium, rhenium,bohrium, iron, ruthenium, osmium, hassium, cobalt, rhodium, iridium,meitnerium, nickel, palladium, platinum, darmstadtium, copper, silver,gold, zinc, cadmium, and mercury. The metal precursor can morepreferably comprise metals selected from the group consisting oftitanium, zirconium, vanadium, tantalum, hafnium, chromium, molybdenum,tungsten, manganese, iron, cobalt, nickel, palladium, platinum, copper,silver, gold, zinc, cadmium, and mercury. The metal precursor can mostpreferably comprise metals selected from the group consisting oftantalum, hafnium, zirconium, titanium, tungsten, molybdenum, andchromium.

Early transition metals can be oxophilic and electropositive and canform thermodynamically stable complexes with higher formal oxidationstates. In contrast, synthesis, storage, and manipulation of metalprecursors comprising electropositive metals having low formal oxidationstates can be very challenging.

According to one embodiment, a method for forming a metal film on asemiconductor substrate comprises heating the semiconductor substrate toobtain a heated semiconductor substrate; exposing the heatedsemiconductor substrate to a composition containing at least one metalprecursor comprising at least one ligand, an excess amount of neutrallabile ligands, a supercritical solvent, and optionally at least onesource of B, C, N, Si, P, and mixtures thereof; exposing the compositionto a reducing agent and/or thermal energy at or near the heatedsemiconductor substrate; disassociating the at least one ligand from themetal precursor; and forming the metal film while minimizing formationof metal oxides.

The neutral labile ligands used in the above process, as describedherein, temporarily fill coordination sites on the metal in the metalprecursor as they become available such that these empty coordinationsites are not filled with anionic Lewis base ligands that can increasethe oxidation state of the metal.

Moreover, the neutral labile ligands, described herein, are soluble inthe supercritical solvent and can be added in a large molar excess suchthat they are kinetically favored to fill any empty coordination siteson the low valent metal precursor when it becomes available. The neutrallabile ligands can be present in a ratio of at least about 10:1 of molesof neutral labile ligands to moles of the metal precursor, morepreferably the neutral labile ligands can be present in a ratio of atleast about 100:1 of moles of neutral labile ligands to moles of themetal precursor, and most preferably the neutral labile ligands can bepresent in a ratio of at least about 1000:1 of moles of neutral labileligands to moles of the metal precursor.

The molar excess of neutral labile ligands promotes the rapid filling ofthe empty coordination sites on the metal in the metal precursor. Therapid filling of the empty coordination sites thereby promotes themaintenance of the low oxidation state of the metal which in turnpromotes further growth of the metal film.

The reducing agent can be selected from the group consisting of zinc,magnesium, cadmium, mercury, sodium, potassium, lithium, boron,aluminum, and alloys thereof. In other embodiments, the reducing agentcan be selected from the group consisting of hydrogen, alcohols,formaldehyde, silanes, thiols, amines, phosphines, alkenes, dienes,ketones, diketones, heterocyclics, and mixtures thereof. In yet otherembodiments, the reducing agent can be selected from the groupconsisting of lithium aluminum hydride, sodium borohydride, potassiumferricyanide, sodium naphthalenide, lithium amines, calcium hydride,Fe(II) complexes, cobaltocene, organoboranes, and mixtures thereof. Inpreferred embodiments, the reducing agent can be hydrogen.

The supercritical solvent in the above-described process can be at atemperature of from about 20° C. to about 150° C. The temperature of thesemiconductor substrate can be from about 20° C. to about 450° C.Further, the pressure in the above-described process can be from about1000 psi to about 7000 psi.

According to another embodiment, a method for forming a metal film on asemiconductor substrate comprises heating the semiconductor substrate toobtain a heated semiconductor substrate; exposing the heatedsemiconductor substrate to a composition containing at least one metalprecursor comprising at least one ligand, an excess amount of neutrallabile ligands, a supercritical solvent, and at least one source of B,C, N, Si, P, and mixtures thereof; exposing the composition to areducing agent and/or thermal energy at or near the heated semiconductorsubstrate; displacing the at least one ligand from the metal precursorwith the at least once source of B, C, N, Si, P, and mixtures thereof;and forming the metal film while minimizing formation of metal oxides.

In some embodiments, after the displacing step in the second embodiment,the metal precursor with the at least one source of B, C, N, Si, P, andmixtures thereof is modified to obtain a metal defined by M_(a)X_(b),and wherein M is a metal, X is B, C, N, Si, P, or mixtures thereof, anda or b=1 to 5.

The modification can comprise exposing the metal precursor to thermalenergy, reducing the metal, reducing the at least one source of B, C, N,Si, P, and mixtures thereof, and/or exposing the metal precursor to areagent.

The composition of the second embodiment can further comprise (i) atleast one reducing agent, and/or (ii) at least one co-solvent.

In preferred embodiments, the reducing agent can be hydrogen.

The source of B, C, N, Si, or P can be selected from the groupconsisting of boranes, diborane, alkyls, arenes, alkenes, alkyllithium,Grignard agents, dimethyl magnesium, methyl zinc, organocuprates,peroxides, amines, imines, nitriles, cyanates, azides, azo compounds,silanes, siloxanes, phosphines, and phosphites. In other embodiments,the source of B, C, N, Si or P can be selected from the group consistingof diborane, triphenyl phosphine, triethyl phosphine, ammonia, triethylamine, triphenyl amine, diazomethane, hydrazine, diphenyl hydrazine,acetonitrile, butyronitrile, silane, disilane, methane, ethane,methylithium, and methyl Grignard.

The supercritical solvent in the above-described processes can be at atemperature of from about 20° C. to about 150° C. The temperature of thesemiconductor substrate can be from about 20° C. to about 450° C.

Further, the pressure in the above-described processes can be maintainedfrom about 1000 psi to about 7000 psi.

By using SCF-based deposition compositions, the precursor component(s)can be continuously circulated in a single wafer processing chamber tothereby expose the SCF-based deposition composition to the heatedsubstrate, and deposit the desired metal film deriving from theprecursor component(s) on the substrate surface. Concurrently,by-products of the deposition operation can be continuously carried outof the deposition chamber via continuous flow of the SCF-basedcomposition through the deposition chamber containing the heatedpedestal and substrate.

Alternatively, the deposition using the SCF-based deposition compositionmay be carried out in a batch mode, wherein the deposition compositionis contacted with the substrate, and process condition(s) (e.g.,temperature and/or pressure) of the composition are altered to effectthe deposition of the desired material deriving from the composition.

According to an embodiment, supercritical solvent-assisted deposition ofa metal film having a thickness of up to about 1 μm on a substrate suchas a semiconductor wafer substrate can be carried out.

In some embodiments, the metal film can comprise one or more metals. Inother embodiments, one or more layers of the metal film can bedeposited. In other embodiments, the metal film may also contain one ormore main group elements B, C, N, Si and/or P.

Deposition using the SCF-based deposition compositions can be carriedout in any suitable manner, including CVD, and other techniques ofapplication of the deposition composition on the semiconductorsubstrate.

The above-described processes are useful for processing semiconductorwafers of any size and can be carried out as a single wafer or batchprocess.

The equipment that can be used in the above-described processes can beany traditionally used equipment for single wafer processing so long asthe equipment can withstand supercritical conditions. See, for example,commonly assigned U.S. Pat. Nos. 6,561,220, 6,736,149, and 6,486,078,herein incorporated by reference.

Plasma etching can be performed upstream or downstream of theabove-described processes. Plasma etching can be performed in varioustypes of plasma reactors using various types of etch gas chemistries.See, for example, commonly assigned U.S. Pat. Nos. 6,893,969 titled “Useof ammonia for etching organic low-k dielectrics”, 6,841,483 titled“Unique process chemistry for etching organic low-k materials”,6,620,733 titled “Use of hydrocarbon addition for the elimination ofmicromasking during etching of organic low-k dielectrics”, and 6,337,277titled “Clean chemistry low-k organic polymer etch”. See also U.S. Pat.No. 6,909,195 titled “Trench etch process for low k dielectrics” andU.S. Pre-Grant Patent Publication No. 2005/0026430 titled “Selectiveetching of carbon-doped low-k dielectrics” for an exemplary descriptionof the plasma etching process.

Photoresist ashing can be performed in various types of plasma chambersusing various photoresist stripping gas chemistries. The photoresistashing process is often referred to as a “dry” “cleaning” step. See, forexample, commonly assigned U.S. Pat. Nos. 6,949,411 titled “Method forpost-etch and strip residue removal on CORAL films” and 6,777,344 titled“Post-etch photoresist strip with O₂ and NH₃ for organosilicate glasslow-K dielectric etch applications”. See also U.S. Pre-Grant PatentPublication No. 2005/0230351 titled “Plasma processing method andapparatus” and U.S. Pat. No. 6,323,121 titled “Fully dry post-via-etchcleaning method for a damascene process” for an exemplary description ofthe photoresist ashing process.

A general cleaning process can be performed upstream or downstream ofthe above-described metal deposition processes. See, for example,commonly assigned U.S. Pat. No. 6,277,203 titled “Method and apparatusfor cleaning low K dielectric and metal wafer surfaces”. See also U.S.Pre-Grant Patent Publication No. 2005/0279381 titled “Method forcleaning microstructure” and U.S. Pat. No. 6,457,477 titled “Method ofcleaning a copper/porous low-k dual damascene etch” for an exemplarydescription of the general cleaning process.

A barrier layer deposition process can be performed upstream ordownstream of the above-described metal deposition processes. See, forexample, U.S. Pre-Grant Patent Publication No. 2006/0102895 titled“Precursor compositions for forming tantalum-containing films, andtantalum-containing barrier films and copper-metallized semiconductordevice structures” and U.S. Pat. No. 7,049,226 titled “Integration ofALD tantalum nitride for copper metallization” for an exemplarydescription of the barrier layer deposition process.

All of the above-mentioned references are herein incorporated byreference in their entirety to the same extent as if each individualreference was specifically and individually indicated to be incorporatedherein by reference in its entirety.

While the invention has been described with reference to preferredembodiments, it is to be understood that variations and modificationsmay be resorted to as will be apparent to those skilled in the art. Suchvariations and modifications are to be considered within the purview andscope of the invention as defined by the claims appended hereto.

1. A method for forming a metal film on a semiconductor substratecomprising: heating the semiconductor substrate to obtain a heatedsemiconductor substrate; exposing the heated semiconductor substrate toa composition containing at least one metal precursor comprising atleast one ligand, an excess amount of neutral labile ligands, asupercritical solvent, and optionally at least one source of B, C, N,Si, P, and mixtures thereof; exposing the composition to a reducingagent and/or thermal energy at or near the heated semiconductorsubstrate; disassociating the at least one ligand from the metalprecursor; and forming the metal film while minimizing formation ofmetal oxides.
 2. The method of claim 1, wherein the composition furthercomprises (i) at least one reducing agent, and/or (ii) at least oneco-solvent.
 3. The method of claim 2, wherein (i) the reducing agent isselected from the group consisting of zinc, magnesium, cadmium, mercury,sodium, potassium, lithium, boron, aluminum, and alloys thereof, (ii)the reducing agent is selected from the group consisting of hydrogen,alcohols, formaldehyde, silanes, thiols, amines, phosphines, alkenes,dienes, ketones, diketones, heterocyclics, and mixtures thereof, (iii)the reducing agent is selected from the group consisting of lithiumaluminum hydride, sodium borohydride, potassium ferricyanide, sodiumnaphthalenide, lithium amines, calcium hydride, Fe(II) complexes,cobaltocene, organoboranes, and mixtures thereof, (iv) the reducingagent is hydrogen, (v) the co-solvent is selected from the groupconsisting of alcohols, ketones, amines, esters, ethers, lactones,carbonates, alkanes, arenes, heterocyclics, amides, and mixturesthereof, vi) the co-solvent is selected from the group consisting ofmethanol, ethanol, N-alkylpyrrolidones, N-arylpyrrolidones,dimethylsulfoxide, sulfolane, catechol, ethyl lactate, acetone, butylcarbitol, monoethanolamine, butyrol lactone, diglycol amine,gamma-butyrolactone, butylene carbonate, ethylene carbonate, propylenecarbonate, hydrofluorocarbons, hydrofluoroethers, sulfur hexafluoride,propane, butane, pentane, hexane, methane, propane, dimethylformamide,N-methylpyrrolidone, diethyl ether, acetone, isopropyl alcohol,dimethylsulfoxide, and mixtures thereof, (vii) the source of B, C, N,Si, or P is selected from the group consisting of boranes, diborane,alkyls, arenes, alkenes, alkyllithium, Grignard agents, dimethylmagnesium, methyl zinc, organocuprates, peroxides, amines, imines,nitriles, cyanates, azides, azo compounds, silanes, siloxanes,phosphines, phosphites, and mixtures thereof, and/or (viii) the sourceof B, C, N, Si or P is selected from the group consisting of diborane,triphenyl phosphine, triethyl phosphine, ammonia, triethyl amine,triphenyl amine, diazomethane, hydrazine, diphenyl hydrazine,acetonitrile, butyronitrile, silane, disilane, methane, ethane,methylithium, methyl Grignard, and mixtures thereof.
 4. The method ofclaim 1, wherein (i) the metal precursor is present in a range of fromabout 0.001 to about 20% by weight, (ii) the supercritical solvent ispresent in a range of from about 10% to about 99.9% by weight, (iii) thecomposition is surfactant-free, (iv) the metal precursor comprisestransition metals selected from the group consisting of scandium,yttrium, lanthanum, actinium, titanium, rutherfordium, vanadium,niobium, tantalum, dubnium, chromium, molybdenum, tungsten, seaborgium,manganese, technitium, rhenium, bohrium, iron, ruthenium, osmium,hassium, cobalt, rhodium, iridium, meitnerium, nickel, palladium,platinum, darmstadtium, copper, silver, gold, zinc, cadmium, mercury,and mixtures thereof, (v) the metal precursor comprises transitionmetals selected from the group consisting of titanium, vanadium,tantalum, chromium, molybdenum, tungsten, manganese, iron, cobalt,nickel, palladium, platinum, copper, silver, gold, zinc, cadmium,mercury, and mixtures thereof, (vi) the metal precursor comprisestransition metals selected from the group consisting of tantalum,titanium, tungsten, molybdenum, chromium, and mixtures thereof, (vii)the neutral labile ligands are present in a ratio of at least about 10:1of moles of neutral labile ligands to moles of the metal precursor,(viii) the neutral labile ligands are present in a ratio of at leastabout 100:1 of moles of neutral labile ligands to moles of the metalprecursor, (ix) the neutral labile ligands are present in a ratio of atleast about 1000:1 of moles of neutral labile ligands to moles of themetal precursor, (x) the neutral labile ligands are selected from thegroup consisting of ethers, nitriles, thioethers, alkenes, alkynes,acyclic dienes, arenes, aromatics, ketones, amines, phosphines,isocyanides, isonitriles, CO, dinitrogen, and mixtures thereof, (xi) theneutral labile ligands are selected from the group consisting of CO,acetonitrile, tetrahydrofuran, ethyl ether, triethylamine, triphenylphosphine, ethylene, butadiene, 4-heptanone, and mixtures thereof, (xii)the neutral labile ligands are selected from the group consisting of CO,acetonitrile, tetrahydrofuran, ether, and mixtures thereof, (xiii) thesupercritical solvent is selected from the group consisting of carbondioxide, oxygen, argon, krypton, xenon, ammonia, methane, methanol,dimethyl ketone, a hydrogen forming gas, sulfur hexafluoride, andmixtures thereof, (xiv) the metal film comprises one or more elementalmetals, and/or (xv) one or more layers of the metal film are deposited.5. The method of claim 1, wherein (i) the supercritical solvent is at atemperature of from about 20° C. to about 150° C., (ii) the temperatureof the semiconductor substrate is from about 20° C. to about 450° C.,and/or (iii) the method is carried out in a vessel which is pressurizedfrom about 1000 psi to about 7000 psi.
 6. (canceled)
 7. (canceled) 8.(canceled)
 9. (canceled)
 10. (canceled)
 11. (canceled)
 12. (canceled)13. A composition for forming metal films on semiconductor substratescomprising: at least one metal precursor comprising at least one sourceof B, C, N, Si, P, and mixtures thereof; neutral labile ligands; atleast one supercritical solvent; and optionally at least one source ofB, C, N, Si, P, and mixtures thereof.
 14. The composition of claim 13,further comprising (i) at least one reducing agent, and/or (ii) at leastone co-solvent.
 15. The composition of claim 14, wherein (i) thereducing agent is selected from the group consisting of zinc, magnesium,cadmium, mercury, sodium, potassium, lithium, boron, aluminum, andalloys thereof, (ii) the reducing agent is selected from the groupconsisting of hydrogen, alcohols, formaldehyde, silanes, thiols, amines,phosphines, alkenes, dienes, ketones, diketones, heterocyclics, andmixtures thereof, (iii) the reducing agent is selected from the groupconsisting of lithium aluminum hydride, sodium borohydride, potassiumferricyanide, sodium naphthalenide, lithium amines, calcium hydride,Fe(II) complexes, cobaltocene, organoboranes, and mixtures thereof, (iv)the reducing agent is hydrogen, (v) the co-solvent is selected from thegroup consisting of alcohols, ketones, amines, esters, ethers, lactones,carbonates, alkanes, arenes, heterocyclics, amides, and mixturesthereof, (vi) the co-solvent is selected from the group consisting ofmethanol, ethanol, N-alkylpyrrolidones, N-arylpyrrolidones,dimethylsulfoxide, sulfolane, catechol, ethyl lactate, acetone, butylcarbitol, monoethanolamine, butyrol lactone, diglycol amine,gamma-butyrolactone, butylene carbonate, ethylene carbonate, propylenecarbonate, hydrofluorocarbons, hydrofluoroethers, sulfur hexafluoride,propane, butane, pentane, hexane, methane, propane, dimethylformamide,N-methylpyrrolidone, diethyl ether, acetone, isopropyl alcohol,dimethylsulfoxide, and mixtures thereof, (vii) the source of B, C, N,Si, or P is selected from the group consisting of boranes, diborane,alkyls, arenes, alkenes, alkyllithium, Grignard agents, dimethylmagnesium, methyl zinc, organocuprates, peroxides, amines, imines,nitriles, cyanates, azides, azo compounds, silanes, siloxanes,phosphines, phosphites and mixtures thereof, and/or (viii) the source ofB, C, N, Si or P is selected from the group consisting of diborane,triphenyl phosphine, triethyl phosphine, ammonia, triethyl amine,triphenyl amine, diazomethane, hydrazine, diphenyl hydrazine,acetonitrile, butyronitrile, silane, disilane, methane, ethane,methylithium, methyl Grignard, and mixtures thereof.
 16. The compositionof claim 13, wherein (i) the metal precursor is present in a range offrom about 0.001 to about 20% by weight, (ii) the supercritical solventis present in a range of from about 10% to about 99.9% by weight, (iii)the composition is surfactant-free, (iv) the metal precursor comprisestransition metals selected from the group consisting of scandium,yttrium, lanthanum, actinium, titanium, rutherfordium, vanadium,niobium, tantalum, dubnium, chromium, molybdenum, tungsten, seaborgium,manganese, technitium, rhenium, bohrium, iron, ruthenium, osmium,hassium, cobalt, rhodium, iridium, meitnerium, nickel, palladium,platinum, darmstadtium, copper, silver, gold, zinc, cadmium, mercury,and mixtures thereof, (v) the metal precursor comprises transitionmetals selected from the group consisting of titanium, vanadium,tantalum, chromium, molybdenum, tungsten, manganese, iron, cobalt,nickel, palladium, platinum, copper, silver, gold, zinc, cadmium,mercury, and mixtures thereof, (vi) the metal precursor comprisestransition metals selected from the group consisting of tantalum,hafnium, zirconium, titanium, tungsten, molybdenum, chromium, andmixtures thereof, (vii) the neutral labile ligands are present in aratio of at least about 10:1 of moles of neutral labile ligands to molesof the metal precursor, (viii) the neutral labile ligands are present ina ratio of at least about 100:1 of moles of neutral labile ligands tomoles of the metal precursor, (ix) the neutral labile ligands arepresent in a ratio of at least about 1000:1 of moles of neutral labileligands to moles of the metal precursor, (x) the neutral labile ligandsare selected from the group consisting of ethers, nitriles, thioethers,alkenes, alkynes, acyclic dienes, arenes, aromatics, ketones, amines,phosphines, isocyanides, isonitriles, CO, dinitrogen, and mixturesthereof, (xi) the neutral labile ligands are selected from the groupconsisting of CO, acetonitrile, tetrahydrofuran, ethyl ether,triethylamine, triphenyl phosphine, ethylene, butadiene, 4-heptanone,and mixtures thereof, (xii) the neutral labile ligands are selected fromthe group consisting of CO, acetonitrile, tetrahydrofuran, ether, andmixtures thereof, (xiii) the supercritical solvent is selected from thegroup consisting of carbon dioxide, oxygen, argon, krypton, xenon,ammonia, methane, methanol, dimethyl ketone, a hydrogen forming gas,sulfur hexafluoride, and mixtures thereof, (xiv) the metal in the metalprecursor has an oxidation state that is lower than thethermodynamically favored oxidation state of the metal, (xv) the metalfilm comprises one or more elemental metals, and/or (xvii) one or morelayers of the metal film are deposited.